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| HL1553 1.55 m Laser Diode with EA Modulator Description The HL1553 is a 1.55 m InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps external modulation systems. Features * * * * * Long wavelength output: p = 1556 nm Typ. High extinction ratio: 13 dB Min. at VR(EA) = -2 V Fast pulse response: tr/tf 125 ps Dynamic single longitudinal mode: Sr = 40 dB Typ. Package: open air package (chip on carrier) with micro strip-line Package Type * HL1553: AF Internal Circuit * HL1553 2 LD 50 3 Modulator 1 HL1553 Absolute Maximum Ratings (TC = 25C) Item LD forward current Optical output power *1 Symbol IF PO VR(EA) Topr Tstg Value 100 1.5 2 -5 10 to 40 0 to 60 Unit mA mW V V C C Laser diode reverse voltage VR(LD) Modulator reverse voltage Operating Temperature Storage temperature Note: 1. TC = 40C; Life time of the HL1553 is determined under the conditions at TC = 40C, PO = 1.5 mW (VR(EA) = 0). Optical and Electrical Characteristics (TC = 25C) Item Threshold current Optical output power Slope efficiency Extinction ratio Lasing wavelength Symbol Min Ith PO s ER p // tr tr S21 S11 -- 3.0 0.04 13 1545 30 -- -- -- -- 4 10 Typ 20 -- -- -- 1556 40 30 40 -- -- -- -- Max 40 -- -- -- 1565 -- -- -- 125 125 -- -- Unit mA mW Kink free, VR(EA) = 0 V IF(LD) = 70 mA, VR(EA) = 0/-2 V 2.5 Gbps (NRZ) 2.5 Gbps (NRZ) PO = 3 mW, FWHM PO = 3 mW, FWHM 2.5 Gbps (NRZ) 2.5 Gbps (NRZ) IF(LD) = 70 mA, VR(EA) = -1 V IF(LD) = 70 mA, VR(EA) = -1 V, f 3 GHz mW/mA IF(LD) 70 mA, VR(EA) = 0 V dB nm dB deg. deg. ps ps GHz dB Test Conditions Side-mode suppression ratio Sr Beam divergence (parallel) Beam divergence (perpendicular) Rise time Fall time Cutoff frequency RF return loss 2 HL1553 Typical Characteristics Curves Forward Current vs. Forward Voltage 100 80 60 40 20 0 Optical output power PO (mW) Forward current IF (mA) TC=25C VR(EA)=0 Optical Output Power vs. Forward Current 5 4 3 2 1 0 TC=25C VR(EA)=0 0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 Forward voltage VF (V) Forward current IF (mA) Threshold Current vs. Case Temperature 100 Threshold current Ith (mA) Extinction Ratio vs. Modulator Reverse Voltage 0 IF(LD)=70mA TC=25C Extinction ratio (dB) -10 10 -20 -30 1 0 20 40 60 -40 0 1 2 3 4 Case temperature TC (C) Modulator reverse voltage VR(EA) (V) 3 HL1553 Far Field Pattern Parallel TC=25C Relative intensity PO=3 mW VR(EA)=0 TC=25C Perpendicular PO=3 mW VR(EA)=0 -40 -20 0 20 40 -40 -20 0 20 40 Angle (deg) Frequency Response Characteristics 0 Relative output power (dB) 3dB TC=25C IF(LD)=70mA VR(EA)=-1V Return loss (dB) -10 Return Loss Characteristics TC=25C IF(LD)=70mA VR(EA)=-1V -20 0 10 Modulation frequency f (GHz) 20 -30 0 10 Modulation frequency f (GHz) 20 4 HL1553 Optical Pulse Response 2.48832Gbps(NRZ) IF(LD)=70mA VR(EA)=-1V VP=2VP-P PRBS=223-1 10dB Lasing Spectrum 2.48832Gbps(NRZ) IF(LD)=70mA VR(EA)=-1V VP=2VP-P PRBS=223-1 100ps Relative intensity (dB) Relative intensity 2GHz 5 |
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